silicon carbide substrate

基本解释

The invention discloses an etching stopping layer comprising a nitrogenous silicon carbide layer formed on a substrate and a silicon nitride layer formed on the silicon carbide layer.
本发明公开了一种刻蚀停止层，包括在衬底上形成的含氮的碳化硅层，以及位于所述碳化硅层之上的氮化硅层。
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The influences of the fiber substrate pretreatment process and matrix densification methods on the properties of carbon fibers reinforced silicon carbide composites have been investigated.
研究了炭纤维编织增强体的预处理工艺和基体致密化工艺对炭纤维增强碳化硅基复合材料性能的影响。